Quantitative photomodulated thermoreflectance studies of germanium and silicon semiconductors
نویسندگان
چکیده
The frequency response of the photomodulated thermoreflectance (PMTR) signal has been used to characterize various semiconductor samples, including crystalline Ge/Si, ion-implanted Ge, and amorphous Si. Theoretical modelling has allowed the deconvolution of electron-hole plasmaand thermal-wave contributions to the signal throughout the entire frequency range.
منابع مشابه
Diffusion and Defect Reactions in Isotopically Controlled Semiconductors
Point defects in semiconductors play a decisive role for the functionality of semiconductors. A detailed, quantitative understanding of diffusion and defect reactions of dopants is required for advanced modelling of modern nanometer size electronic devices. With isotope heterostructures which consist of epitaxial layers of isotopically pure and deliberately mixed stable isotopes, we have studie...
متن کاملThermoreflectance based thermal microscope
Thermal images of active semiconductor devices are acquired and processed in real time using visible light thermoreflectance imaging with 34 mK sensitivity. By using a 16316 alternating current coupled photodiode array with synchronous frequency domain filtering a dynamic range of 123 dB is achieved for 1 s averaging. Thus with a stable and higher power light source, fundamentally the camera ca...
متن کاملDissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.
Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycr...
متن کاملElectron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium
Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in sil...
متن کاملExperimental investigation of size effects on the thermal conductivity of silicon-germanium alloy thin films.
We experimentally investigate the role of size effects and boundary scattering on the thermal conductivity of silicon-germanium alloys. The thermal conductivities of a series of epitaxially grown Si(1-x)Ge(x) thin films with varying thicknesses and compositions were measured with time-domain thermoreflectance. The resulting conductivities are found to be 3 to 5 times less than bulk values and v...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2007